Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
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United States of America Patent
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Aug 29, 2006
Grant Date -
Nov 4, 2004
app pub date -
May 28, 2004
filing date -
Jul 19, 2001
priority date (Note) -
Expired
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Abstract
Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR.sub.1)(NR.sub.2R.sub.3).sub.3, wherein R.sub.1, R.sub.2 and R.sub.3 are each independently H or a C.sub.1 C.sub.6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.
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