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Abstract

This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.

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First Claim