Method of manufacturing a semiconductor device having adjoining substrates

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United States of America Patent

PATENT NO 7101729
SERIAL NO

10392191

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Abstract

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The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDREPUBLIC OF KOREA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hara, Hiroyuki Chino, JP 163 1426
Inoue, Satoshi Chino, JP 511 10547
Kimura, Mutsumi Kyotanabe, JP 89 4982
Miyazawa, Wakao Chino, JP 19 4092
Utsunomiya, Sumio Suwa, JP 42 1296

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