Methods for manufacturing stacked gate structure and field effect transistor provided with the same

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United States of America Patent

PATENT NO 7101777
APP PUB NO 20050074957A1
SERIAL NO

10864320

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Abstract

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The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer, a poly-silicon layer, a titanium layer, and a WN.sub.X layer on a semiconductor substrate, carrying out a rapid thermal annealing (RTA) in a nitrogen ambient, forming a silicon nitride layer on the tungsten layer, and patterning the multilayer thin-film structure into a predetermined configuration.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NANYA TECHNOLOGY CORPORATIONTAOYUAN938

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Tzu-En Jiaosi Township, TW 7 30
Wu, Chang-Rong Banciao, TW 32 157

Cited Art Landscape

Patent Info (Count) # Cites Year
 
PS4 LUXCO S.A.R.L. (1)
* 6800543 Semiconductor device having a low-resistance gate electrode 12 2002
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
* 6277719 Method for fabricating a low resistance Poly-Si/metal gate 15 1999
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (1)
* 6306743 Method for forming a gate electrode on a semiconductor substrate 39 2001
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Mattson Technology, Inc. (2)
8093157 Advanced processing technique and system for preserving tungsten in a device structure 0 2007
* 2009/0011,615 Advanced Processing Technique and System for Preserving Tungsten in a Device Structure 1 2007
 
NANYA TECHNOLOGY CORPORATION (1)
* 2012/0276,730 METHODS FOR FABRICATING A GATE DIELECTRIC LAYER AND FOR FABRICATING A GATE STRUCTURE 0 2011
 
SAMSUNG ELECTRONICS CO., LTD. (4)
7928498 Gate structures in semiconductor devices 1 2009
* 2009/0267,132 GATE STRUCTURES IN SEMICONDUCTOR DEVICES 4 2009
8404576 Methods of forming a gate structure 0 2011
* 2011/0171,818 METHODS OF FORMING A GATE STRUCTURE 2 2011
 
SK HYNIX INC. (2)
* 9159779 Method of fabricating semiconductor device 0 2012
* 2014/0004,679 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 1 2012
* Cited By Examiner

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