The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer, a poly-silicon layer, a titanium layer, and a WN.sub.X layer on a semiconductor substrate, carrying out a rapid thermal annealing (RTA) in a nitrogen ambient, forming a silicon nitride layer on the tungsten layer, and patterning the multilayer thin-film structure into a predetermined configuration.
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