Method of forming barrier layers
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United States of America Patent
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Sep 5, 2006
Issued Date -
N/A
app pub date -
Aug 19, 2003
filing date -
Mar 16, 1999
priority date (Note) -
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Abstract
Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of M.sub.xAl.sub.yN.sub.zB.sub.w alloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.
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