Conformal lining layers for damascene metallization
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United States of America Patent
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Sep 5, 2006
Grant Date -
Jul 8, 2004
app pub date -
Dec 15, 2003
filing date -
Oct 15, 1999
priority date (Note) -
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Abstract
Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
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