Rotary silicon wafer cleaning apparatus
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United States of America Patent
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Sep 12, 2006
Issued Date -
N/A
app pub date -
Sep 11, 2003
filing date -
Sep 24, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
First Claim
Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| OHMI TADAHIRO | MIYAGI PREFECTURE JAPAN MIYAGI | |
| FUJIKIN INCORPORATED | 3-2 ITACHIBORI 2-CHOME NISHI-KU OSAKA-SHI OSAKA 5500012 ?5500012 | |
| PRE-TECH CO LTD | 2-1-14 FUCHUCHO FUCHU-SHI TOKYO |
International Classification(s)
Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Fujita, Takumi | Fuchu, JP | 40 | 150 |
| Ikeda, Nobukazu | Osaka, JP | 234 | 4423 |
| Kawada, Koji | Osaka, JP | 39 | 487 |
| Minami, Yukio | Osaka, JP | 46 | 1275 |
| Morimoto, Akihiro | Osaka, JP | 99 | 956 |
| Ohmi, Tadahiro | Sendai, JP | 798 | 14083 |
| Shirai, Yasuyuki | Sendai, JP | 65 | 1037 |
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|
| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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