Visual analysis and verification system using advanced tools
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United States of America Patent
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Sep 12, 2006
Grant Date -
Mar 21, 2002
app pub date -
Jul 16, 2001
filing date -
Sep 17, 1997
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A system and method of analyzing defects on a mask used in lithography are provided. A defect area image is provided as a first input, a set of lithography parameters is provided as a second input, and a set of metrology data is provided as a third input. The defect area image comprises an image of a portion of the mask. A simulated image can be generated in response to the first input. The simulated image comprises a simulation of an image that would be printed on a wafer if the wafer were exposed to a radiation source directed at the portion of the mask. The characteristics of the radiation source comprise the set of lithography parameters and the characteristics of the mask comprise the set of metrology data.
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