Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
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United States of America Patent
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Sep 19, 2006
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app pub date -
May 17, 2005
filing date -
May 17, 2005
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Abstract
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
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