System and method for hydrogen-rich selective oxidation
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United States of America Patent
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Sep 19, 2006
Grant Date -
Jul 15, 2004
app pub date -
Jun 6, 2003
filing date -
Jun 6, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.
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