Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process
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United States of America Patent
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Oct 3, 2006
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app pub date -
Jan 8, 2004
filing date -
Dec 17, 2001
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Abstract
A process for fabrication of a semiconductor device including an ONO structure as a component of a flash memory device, comprising forming the ONO structure by providing a semiconductor substrate having a silicon surface; forming a first oxide layer on the silicon surface; depositing a silicon nitride layer on the first oxide layer; and forming a top oxide layer on the silicon nitride layer, wherein the top oxide layer is formed by an in-situ steam generation oxidation of a surface of the silicon nitride layer. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate FLASH memory device including an ONO structure.
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