Lateral power MOSFET for high switching speeds
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 3, 2006
Issued Date -
N/A
app pub date -
Oct 19, 2004
filing date -
Oct 29, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully