Thin film magnetic memory device having a magnetic tunnel junction

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United States of America Patent

PATENT NO 7116595
SERIAL NO

10982895

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Abstract

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Bit lines and source lines are precharged to a power supply voltage before data read operation. In the data read operation, a corresponding bit line is coupled to a data bus as well as a corresponding source line is driven to a ground voltage only in the selected memory cell column. In the non-selected memory cell columns, the bit lines and the source lines are retained at the precharge voltage, i.e., the power supply voltage. No charging/discharging current is produced in the bit lines of the non-selected memory cell columns, that is, a charging/discharging current that does not directly contribute the data read operation is not produced, thereby allowing for reduction in power consumption in the data read operation.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hidaka, Hideto Hyogo, JP 318 6568

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