Flash memory device with improved programming performance
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United States of America Patent
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Oct 10, 2006
Issued Date -
N/A
app pub date -
Mar 3, 2006
filing date -
May 7, 2004
priority date (Note) -
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Abstract
A selected wordline that is coupled to a cell to be programmed is biased during a program operation. The unselected wordlines are biased with a negative potential to reduce the cell leakage at programming bitline potential. A programming pulse is applied to the bitline coupled to the cell to be programmed. During verification, the unselected wordlines are biased back to ground potential.
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