Integrated memory controller

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7120084
APP PUB NO 20050276151A1
SERIAL NO

10867113

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Abstract

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A system and circuit for reading and writing data to a buffer memory, which is Synchronous Dynamic Random access Memory ('SDRAM'), or Double Data Rate-Synchronous Dynamic Random Access Memory ('DDR') is provided. The circuit includes logic for managing programmable clock signal relationships such that data arrives at an optimum time for writing. Data that is to be written at DDR is moved from a first buffer clock to a DDR write clock signal and to a DQS signal that is based on a SDRAM clock signal. Also, plural tap-cells may be used to delay clock signals such that data and clock signals are aligned. An emulated DQS signal in a DDR capture scheme is used for reading from a SDRAM.

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Patent Owner(s)

Patent OwnerAddress
MARVELL ASIA PTE LTDTAI SENG CENTRE 3 IRVING ROAD #10-01 SINGAPORE 369522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jayabharathi, Dinesh Orange, CA 7 33
White, Theodore C Margarita, CA 24 549

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