Electrooptical device and a method of manufacturing the same
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United States of America Patent
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-
Oct 17, 2006
Issued Date -
N/A
app pub date -
Apr 4, 2000
filing date -
Apr 7, 1999
priority date (Note) -
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status (Latency Note)
Importance
Abstract
To provide a semiconductor device of high reliability by arranging TFTs that have appropriate structures in accordance with circuit functions. In a semiconductor device having a driver circuit portion and a pixel portion on the same insulator, gate insulating films of a driver TFT are designed to be thinner than a gate insulating film of a pixel TFT. In the pixel TFT, channel forming regions are formed under a gate electrode, and a separation region is formed between the channel forming regions. At this point, LDD regions have a region that overlaps with the gate electrode and a region that does not.
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