Methods for residue removal and corrosion prevention in a post-metal etch process
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United States of America Patent
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Nov 14, 2006
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app pub date -
Jan 28, 2005
filing date -
Jul 29, 2002
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Abstract
A method of plasma assisted CO.sub.2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N.sub.2 or H.sub.2O. The process removes polymer residues present on a metal layer on a substrate and on the sidewalls of metal lines and inhibits chlorine-based corrosion while being very selective to exposed Ti, TiN, Al and SiO.sub.2. The invention is particularly suited for removing post metal etch polymer residue from top and sidewall of metal lines.
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