Coating silicon pellets with dopant for addition of dopant in crystal growth
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United States of America Patent
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Nov 14, 2006
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app pub date -
Mar 4, 2004
filing date -
May 9, 2002
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Abstract
An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.
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