Enhanced process and profile simulator algorithms

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United States of America Patent

PATENT NO 7139632
SERIAL NO

10932926

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Abstract

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A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cooperberg, David Mt. Kisco, NY 8 347
Vahedi, Vahid Albany, CA 47 2088

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