Method and apparatus for anisotropic etching
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United States of America Patent
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Nov 28, 2006
Issued Date -
N/A
app pub date -
Jul 23, 1999
filing date -
Jul 23, 1998
priority date (Note) -
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Abstract
There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.
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