US Patent No: 7,145,793

Number of patents in Portfolio can not be more than 2000

Electrically addressable memory switch

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Abstract

A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
GLOBALFOUNDRIES INC.SUNNYVALE, CA4006
SPANSION INC.SUNNYVALE, CA3

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bulovic, Vladimir Lexington, MA 121 2918
Mandell, Aaron Boston, MA 12 115
Perlman, Andrew Boston, MA 8 107

Cited Art

Patent Info (Count) # Cites Year
 
ARIZONA BOARD OF REGENTS (1)
6,487,106 Programmable microelectronic devices and method of forming and programming same 306 2000
 
AXON TECHNOLOGIES CORPORATION (1)
6,418,049 Programmable sub-surface aggregating metallization structure and method of making same 251 2000
 
FREESCALE SEMICONDUCTOR, INC. (1)
5,930,162 Quantum random address memory with polymer mixer and/or memory 9 1998
 
GLOBALFOUNDRIES INC. (1)
6,809,955 Addressable and electrically reversible memory switch 20 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
6,548,843 Ferroelectric storage read-write memory 3 1998
 
KABUSHIKI KAISHA TOSHIBA (1)
5,849,403 Organic thin film device 29 1996
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
5,153,681 Electrcally plastic device and its control method 30 1992
 
NIPPON PETROCHEMICALS COMPANY, LIMITED (1)
5,206,525 Electric element capable of controlling the electric conductivity of .pi.-conjugated macromolecular materials 52 1991
 
NORTH CAROLINA STATE UNIVERSITY (1)
6,674,121 Method and system for molecular charge storage field effect transistor 23 2001

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