System and method of forming a split-gate flash memory structure

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United States of America Patent

PATENT NO 7148098
SERIAL NO

10873694

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A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jiun Nan Taipei, TW 3 6
Huang, Shieh Feng Taoyuan, TW 2 3
Tsai, Lien Yo Hsin-Chu, TW 2 3

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