Poly/silicide stack and method of forming the same

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United States of America Patent

PATENT NO 7151048
SERIAL NO

10097674

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Abstract

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A method of forming a semiconductor structure comprises forming sidewall oxide on a stack, by rapid thermal oxidation. The stack is on a substrate and comprises (i) a first layer comprising silicon, (ii) a second layer, comprising silicon and tungsten, on the first layer, and (iii) a capping layer, on the second layer. The sidewall oxide in contact with the second layer is at most 50% thicker than the sidewall oxide in contact with the first layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
CYPRESS SEMICONDUCTOR CORPORATIONSAN JOSE, CA2020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blosse, Alain Belmont, CA 24 135

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 5385866 Polish planarizing using oxidized boron nitride as a polish stop 41 1994
 
POLARIS INNOVATIONS LIMITED (1)
* 6465370 Low leakage, low capacitance isolation material 45 1998
 
UNITED MICROELECTRONICS CORP. (2)
5877074 Method for improving the electrical property of gate in polycide structure 28 1997
6177334 Manufacturing method capable of preventing corrosion of metal oxide semiconductor 12 1998
 
PS4 LUXCO S.A.R.L. (1)
6800543 Semiconductor device having a low-resistance gate electrode 12 2002
 
MICRON TECHNOLOGY, INC. (2)
* 6429496 Ion-assisted oxidation methods and the resulting structures 23 1999
6420250 Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gates 17 2000
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (3)
5393685 Peeling free metal silicide films using rapid thermal anneal 59 1992
5756392 Method of formation of polycide in a semiconductor IC device 21 1997
* 6127227 Thin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memory 50 1999
 
GLOBALFOUNDRIES INC. (1)
* 6287913 Double polysilicon process for providing single chip high performance logic and compact embedded memory structure 30 1999
 
SAMSUNG ELECTRONICS CO., LTD. (1)
6833310 Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same 6 2001
 
SILICON-BASED TECHNOLOGY CORP. (1)
* 6465837 Scaled stack-gate non-volatile semiconductor memory device 14 2001
 
PROMOS TECHNOLOGIES INC. (1)
* 2002/0058,410 Method of prohibiting from producing protrusion alongside silicide layer of gate 9 2001
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
6165884 Method of forming gate electrode in semiconductor device 9 1999
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
HYNIX SEMICONDUCTOR INC. (1)
* 2008/0213,990 METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE 0 2007
* Cited By Examiner

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