Poly/silicide stack and method of forming the same

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United States of America Patent

PATENT NO 7151048
SERIAL NO

10097674

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Abstract

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A method of forming a semiconductor structure comprises forming sidewall oxide on a stack, by rapid thermal oxidation. The stack is on a substrate and comprises (i) a first layer comprising silicon, (ii) a second layer, comprising silicon and tungsten, on the first layer, and (iii) a capping layer, on the second layer. The sidewall oxide in contact with the second layer is at most 50% thicker than the sidewall oxide in contact with the first layer.

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Patent Owner(s)

Patent OwnerAddress
CYPRESS SEMICONDUCTOR CORPORATION198 CHAMPION COURT SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blosse, Alain Belmont, CA 24 187

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