Gas diffusion plate for use in ICP etcher
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 2, 2007
Grant Date -
Jul 24, 2003
app pub date -
Jan 21, 2003
filing date -
Jan 22, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully