US Patent No: 7,157,778

Number of patents in Portfolio can not be more than 2000

Semiconductor constructions

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Abstract

The invention encompasses a method of forming an oxide region over a semiconductor substrate. A nitrogen-containing layer is formed across at least some of the substrate. After the nitrogen-containing layer is formed, an oxide region is grown from at least some of the substrate. The nitrogen of the nitrogen-containing layer is dispersed within the oxide region. The invention also encompasses a method of forming a pair of transistors associated with a semiconductor substrate. A substrate is provided. A first region of the substrate is defined, and additionally a second region of the substrate is defined. A first oxide region is formed which covers at least some of the first region of the substrate, and which does not cover any of the second region of the substrate. A nitrogen-comprising layer is formed across at least some of the first oxide region and across at least some of the second region of the substrate. After the nitrogen-comprising layer is formed, a second oxide region is grown from the second region of the substrate. A first transistor gate is formed over the first oxide region, and a second transistor gate is formed over the second oxide region.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID18599

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moore, John T Boise, ID 212 2139

Cited Art

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (18)
5,142,438 Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact 142 1991
5,445,999 Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation 65 1992
5,376,593 Method for fabricating stacked layer Si.sub.3 N.sub.4 for low leakage high capacitance films using rapid thermal nitridation 98 1992
5,382,533 Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection 95 1993
5,731,235 Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor 38 1996
5,882,978 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor 68 1997
6,054,396 Semiconductor processing method of reducing thickness depletion of a silicide layer at a junction of different underlying layers 25 1997
6,174,821 Semiconductor processing method of depositing polysilicon 25 1997
5,844,771 Capacitor construction 65 1997
6,063,713 Methods for forming silicon nitride layers on silicon-comprising substrates 26 1997
6,150,226 Semiconductor processing methods, methods of forming capacitors, methods of forming silicon nitride, and methods of densifying silicon nitride layers 13 1998
6,111,744 Capacitor constructions having silicon nitride dielectric materials 19 1998
6,323,138 Capacitor, methods of forming capacitors, methods for forming silicon nitride layers on silicon-comprising substrates, and methods of densifying silicon nitride layers 13 1999
6,093,661 Integrated circuitry and semiconductor processing method of forming field effect transistors 44 1999
6,878,585 Methods of forming capacitors 8 2001
6,723,599 Methods of forming capacitors and methods of forming capacitor dielectric layers 11 2001
6,875,707 Method of forming a capacitor dielectric layer 9 2003
6,891,215 Capacitors 8 2003
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (13)
5,334,554 Nitrogen plasma treatment to prevent field device leakage in VLSI processing 43 1992
5,837,592 Method for stabilizing polysilicon resistors 34 1995
5,821,142 Method for forming a capacitor with a multiple pillar structure 23 1996
6,197,701 Lightly nitridation surface for preparing thin-gate oxides 40 1998
6,100,163 Gap filling of shallow trench isolation by ozone-tetraethoxysilane 30 1999
6,110,780 Using NO or N.sub.2 O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory 27 1999
6,136,636 Method of manufacturing deep sub-micron CMOS transistors 70 1999
6,171,900 CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET 117 1999
6,297,162 Method to reduce silicon oxynitride etch rate in a silicon oxide dry etch 36 1999
6,207,532 STI process for improving isolation for deep sub-micron application 72 1999
6,225,167 Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation 47 2000
6,362,085 Method for reducing gate oxide effective thickness and leakage current 32 2000
6,436,771 Method of forming a semiconductor device with multiple thickness gate dielectric layers 42 2001
 
TEXAS INSTRUMENTS INCORPORATED (10)
4,882,649 Nitride/oxide/nitride capacitor dielectric 35 1988
6,040,249 Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy 17 1997
5,969,397 Low defect density composite dielectric 27 1997
6,110,842 Method of forming multiple gate oxide thicknesses using high density plasma nitridation 72 1998
5,970,345 Method of forming an integrated circuit having both low voltage and high voltage MOS transistors 32 1998
6,399,445 Fabrication technique for controlled incorporation of nitrogen in gate dielectric 27 1998
6,268,296 Low temperature process for multiple voltage devices 30 1998
6,331,492 Nitridation for split gate multiple voltage devices 37 1998
6,207,985 DRAM memory cell and array having pass transistors with surrounding gate 24 1999
6,323,114 Stacked/composite gate dielectric which incorporates nitrogen at an interface 28 1999
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (6)
4,254,161 Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking 30 1979
5,449,631 Prevention of agglomeration and inversion in a semiconductor salicide process 35 1994
5,518,958 Prevention of agglomeration and inversion in a semiconductor polycide process 46 1994
5,508,542 Porous silicon trench and capacitor structures 123 1994
5,760,475 Refractory metal-titanium nitride conductive structures 46 1994
6,245,616 Method of forming oxynitride gate dielectric 24 1999
 
GLOBALFOUNDRIES INC. (5)
5,885,877 Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric 62 1997
6,080,629 Ion implantation into a gate electrode layer using an implant profile displacement layer 32 1997
6,274,442 Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same 34 1998
6,255,703 Device with lower LDD resistance 45 1999
6,201,303 Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide 31 1999
 
LUCENT TECHNOLOGIES INC. (5)
5,960,302 Method of making a dielectric for an integrated circuit 39 1996
6,001,741 Method for making field effect devices and capacitors with improved thin film dielectrics and resulting devices 45 1998
6,060,406 MOS transistors with improved gate dielectrics 20 1998
6,140,187 Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate 36 1998
6,207,586 Oxide/nitride stacked gate dielectric and associated methods 29 1999
 
LSI LOGIC CORPORATION (4)
5,837,598 Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same 55 1997
6,033,998 Method of forming variable thickness gate dielectrics 56 1998
6,087,229 Composite semiconductor gate dielectrics 90 1998
6,413,881 PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NITRIDATION OF UPPER SURFACE OF GATE OF OXIDE TO FORM BARRIER OF NITROGEN ATOMS IN UPPER SURFACE REGION OF GATE OXIDE, AND RESULTING PRODUCT 36 2000
 
SAMSUNG ELECTRONICS CO., LTD. (4)
5,227,651 Semiconductor device having a capacitor with an electrode grown through pinholes 44 1992
5,324,679 Method for manufacturing a semiconductor device having increased surface area conductive layer 60 1992
5,498,890 Semiconductor device having a multi-layered dielectric structure and manufacturing method thereof 31 1992
5,350,707 Method for making a capacitor having an electrode surface with a plurality of trenches formed therein 60 1992
 
UNITED MICROELECTRONICS CORP. (4)
5,393,702 Via sidewall SOG nitridation for via filling 36 1993
5,436,481 MOS-type semiconductor device and method of making the same 127 1994
5,920,779 Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits 33 1997
6,350,707 Method of fabricating capacitor dielectric 17 1999
 
ADVANCED MICRO DEVICES, INC. (3)
5,840,610 Enhanced oxynitride gate dielectrics using NF.sub.3 gas 51 1997
5,939,750 Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers 36 1998
6,051,865 Transistor having a barrier layer below a high permittivity gate dielectric 29 1998
 
FUJITSU LIMITED (3)
4,435,447 Method for forming an insulating film on a semiconductor substrate surface 33 1981
4,980,307 Process for producing a semiconductor device having a silicon oxynitride insulative film 90 1989
5,716,864 Method of manufacturing a non-volatile semiconductor memory device with peripheral transistor 41 1996
 
INTEL CORPORATION (3)
5,258,333 Composite dielectric for a semiconductor device and method of fabrication 82 1992
5,763,922 CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers 114 1997
6,087,236 Integrated circuit with multiple gate dielectric structures 39 1998
 
KABUSHIKI KAISHA TOSHIBA (3)
5,051,794 Non-volatile semiconductor memory device and method for manufacturing the same 40 1989
5,237,188 Semiconductor device with nitrided gate insulating film 56 1991
5,620,908 Manufacturing method of semiconductor device comprising BiCMOS transistor 46 1995
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (3)
5,972,783 Method for fabricating a semiconductor device having a nitrogen diffusion layer 68 1997
6,265,327 Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method 57 1998
6,482,690 Method for fabricating semiconductor device 22 2001
 
NEC ELECTRONICS CORPORATION (3)
5,254,489 Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation 118 1991
5,994,749 Semiconductor device having a gate electrode film containing nitrogen 36 1998
6,091,109 Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region 39 1999
 
RENESAS ELECTRONICS CORPORATION (3)
5,459,105 Method of manufacturing a semiconductor device having multilayer insulating films 38 1994
5,972,800 Method for fabricating a semiconductor device with multi-level structured insulator 33 1997
6,492,690 Semiconductor device having control electrodes with different impurity concentrations 40 1999
 
SONY CORPORATION (3)
5,518,946 Process for fabricating capacitors in dynamic RAM 55 1994
5,719,083 Method of forming a complex film over a substrate having a specifically selected work function 40 1995
5,619,057 Complex film overlying a substrate with defined work function 63 1996
 
APPLIED MATERIALS, INC. (2)
2002/0009,861 METHOD AND APPARATUS FOR THE FORMATION OF DIELECTRIC LAYERS 21 1998
6,450,116 Apparatus for exposing a substrate to plasma radicals 43 1999
 
AVAGO TECHNOLOGIES GENERAL IP PTE. LTD. (2)
5,164,331 Method of forming and etching titanium-tungsten interconnects 44 1991
5,318,924 Nitridation of titanium-tungsten interconnects 51 1993
 
FREESCALE SEMICONDUCTOR, INC. (2)
6,146,948 Method for manufacturing a thin oxide for use in semiconductor integrated circuits 29 1997
5,960,289 Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region 139 1998
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (2)
5,330,920 Method of controlling gate oxide thickness in the fabrication of semiconductor devices 85 1993
5,596,218 Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation 88 1993
 
HITACHI, LTD. (2)
4,891,684 Semiconductor device 50 1987
5,504,029 Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs 60 1994
 
NEC CORPORATION (2)
5,330,936 Method of producing a silicon nitride film and method of fabricating a semiconductor device 24 1992
5,397,748 Method of producing semiconductor device with insulating film having at least silicon nitride film 42 1992
 
QIMONDA AG (2)
5,998,253 Method of forming a dopant outdiffusion control structure including selectively grown silicon nitride in a trench capacitor of a DRAM cell 32 1997
6,228,701 Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs 26 1997
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (2)
5,663,077 Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films 280 1994
6,168,980 Semiconductor device and method for forming the same 97 1996
 
SPANSION LLC (2)
6,080,682 Methodology for achieving dual gate oxide thicknesses 60 1997
6,232,244 Methodology for achieving dual gate oxide thicknesses 35 2000
 
AJINOMOTO CO., INC. (1)
6,090,597 Method of producing L-lysine 10 1997
 
ASM AMERICA, INC. (1)
6,348,420 Situ dielectric stacks 97 1999
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
5,674,788 Method of forming high pressure silicon oxynitride gate dielectrics 111 1995
 
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (1)
6,399,448 Method for forming dual gate oxide 32 1999
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
5,897,354 Method of forming a non-volatile memory device with ramped tunnel dielectric layer 40 1996
 
DRS INFRARED TECHNOLOGIES, LP (1)
5,398,641 Method for p-type doping of semiconductor structures formed of group II and group VI elements 31 1993
 
GENERAL ELECTRIC COMPANY (1)
5,026,574 Chemical vapor deposition process for depositing large-grain polysilicon films 28 1989
 
HYNIX SEMICONDUCTOR INC. (1)
6,893,981 Method of manufacturing a semiconductor device by RTA process in nitrogen atmosphere 10 2003
 
INTELLECTUAL PROPERTIES I KFT. (1)
5,981,366 Method for manufacturing non-volatile memory 18 1992
 
LG DISPLAY CO., LTD. (1)
5,500,380 Method for fabricating thin film transistor 32 1994
 
LG SEMICON CO., LTD. (1)
5,834,372 Pretreatment of semiconductor substrate 79 1995
 
MICRON SEMICONDUCTOR, INC. (1)
5,032,545 Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby 88 1990
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
6,410,991 Semiconductor device and method of manufacturing the same 34 1998
 
MOTOROLA, INC. (1)
5,464,792 Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device 91 1994
 
OKI SEMICONDUCTOR CO., LTD. (1)
5,378,645 Method of making a semiconductor device with a capacitor 31 1993
 
ROUND ROCK RESEARCH, LLC (1)
5,612,558 Hemispherical grained silicon on refractory metal nitride 82 1995
 
ROVEC ACQUISITIONS LTD. L.L.C. (1)
6,091,110 MOSFET device having recessed gate-drain shield and method 30 1999
 
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY (1)
5,861,651 Field effect devices and capacitors with improved thin film dielectrics and method for making same 147 1997
 
SEIKO EPSON CORPORATION (1)
5,685,949 Plasma treatment apparatus and method 60 1996
 
SHARP LABORATORIES OF AMERICA, INC. (1)
6,184,110 Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices 40 1998
 
SIEMENS AKTIENGESELLSCHAFT (1)
6,008,104 Method of fabricating a trench capacitor with a deposited isolation collar 73 1998
 
SIEMENS COMPONENTS, INC. (1)
6,057,220 Titanium polycide stabilization with a porous barrier 26 1997
 
STMICROELECTRONICS N.V. (1)
4,996,081 Method of forming multiple nitride coating on silicon 71 1986
 
STMICROELECTRONICS S.R.L. (1)
6,114,203 Method of manufacturing a MOS integrated circuit having components with different dielectrics 37 1996
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
6,001,748 Single crystal of nitride and process for preparing the same 49 1997
 
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (1)
5,633,036 Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions 33 1995
 
TOKYO ELECTRON LIMITED (1)
6,399,520 Semiconductor manufacturing method and semiconductor manufacturing apparatus 68 2000
 
U.S. PHILIPS CORPORATION (1)
4,605,447 Methods of manufacturing semiconductor devices 40 1984
 
VACHELLIA, LLC (1)
5,523,596 Semiconductor device having capacitor and manufacturing method therefor 38 1995
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
5,851,603 Method for making a plasma-enhanced chemical vapor deposited SiO.sub.2 Si.sub.3 N.sub.4 multilayer passivation layer for semiconductor applications 39 1997
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (2)
4,262,631 Thin film deposition apparatus using an RF glow discharge 169 1979
6,077,754 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor 26 1998

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
GLOBALFOUNDRIES SINGAPORE PTE. LTD. (1)
7,928,020 Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 0 2007
 
MICRON TECHNOLOGY, INC. (1)
8,058,130 Method of forming a nitrogen-enriched region within silicon-oxide-containing masses 0 2008
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
8,440,515 Method of forming a field effect transistor 0 2008

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