Controlled cleaving process

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United States of America Patent

PATENT NO 7160790
SERIAL NO

10644644

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Abstract

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A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

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Patent Owner(s)

Patent OwnerAddress
SILICON GENESIS CORPORATIONSAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheung, Nathan W Albany, CA 58 4815
Henley, Francois J Aptos, CA 178 9676

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