Method for ion implanting insulator material to reduce dielectric constant
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 23, 2007
Issued Date -
N/A
app pub date -
Dec 1, 2004
filing date -
Aug 11, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully