Phase change memory cell defined by a pattern shrink material process
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United States of America Patent
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Jan 23, 2007
Grant Date -
Oct 12, 2006
app pub date -
Apr 8, 2005
filing date -
Apr 8, 2005
priority date (Note) -
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Abstract
One embodiment of the present invention provides a memory cell device. The memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process.
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