Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
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United States of America Patent
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Jan 30, 2007
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app pub date -
Nov 19, 2002
filing date -
Nov 19, 2002
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Abstract
High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
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