Non-volatile memory and method with control gate compensation for source line bias errors

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United States of America Patent

PATENT NO 7170784
SERIAL NO

11097502

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Abstract

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Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the source of a memory cell is erroneously biased by a voltage drop across the resistance and results in errors in the applied control gate and drain voltages. This error is minimized when the applied control gate and drain voltages have their reference point located as close as possible to the sources of the memory cells. In one preferred embodiment, the reference point is located at a node where the source control signal is applied. When a memory array is organized in pages of memory cells that are sensed in parallel, with the sources in each page coupled to a page source line, the reference point is selected to be at the page source line of a selected page via a multiplexor.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cernea, Raul-Adrian Santa Clara, CA 131 7379
Chan, Siu Lung San Jose, CA 34 1069

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