Method of two dimensional feature model calibration and optimization

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United States of America Patent

PATENT NO 7175940
APP PUB NO 20030082463A1
SERIAL NO

10266922

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

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Patent Owner(s)

  • ASML NETHERLANDS B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jang Fung Cupertino, CA 96 2072
Hollerbach, Uwe Franklin, MA 14 326
Laidig, Thomas Point Richmond, CA 45 979
Schlief, Ralph Mountain View, CA 3 300
Shi, Xuelong Santa Clara, CA 20 827
Wampler, Kurt E Sunnyvale, CA 26 1114

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