US Patent No: 7,176,114

Number of patents in Portfolio can not be more than 2000

Method of depositing patterned films of materials using a positive imaging process

ALSO PUBLISHED AS: 20040126711

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(Pr.sup.iO).sub.2(EAA).sub.2.

Loading the Abstract Image... loading....

First Claim

See full text

all claims..

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
SIMON FRASER UNIVERSITYBURNABY BRITISH COLUMBIA95

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blair, Sharon Louise Coquitlam, CA 2 2
Hill, Ross H Coquitlam, CA 22 155
Li, Grace Coquitlam, CA 5 8
Ruan, Haixiong Burnaby, CA 2 2
Zhang, Xin Acton, MA 231 671

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SIMON FRASER UNIVERSITY (6)
5,534,312 Method for directly depositing metal containing patterned films 46 1994
6,348,239 Method for depositing metal and metal oxide films and patterned films 9 2000
6,458,431 Methods for the lithographic deposition of materials containing nanoparticles 26 2001
6,723,388 Method of depositing nanostructured films with embedded nanopores 11 2002
6,787,198 Hydrothermal treatment of nanostructured films 4 2002
2005/0285,312 Use of PMOD materials in layered (3D) manufacturing technology 3 2004
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (3)
5,470,693 Method of forming patterned polyimide films 88 1992
6,790,579 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups 15 2000
6,723,486 Photoresist compositions comprising polycyclic polymers with acid labile pendant groups 19 2001
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (2)
5,272,099 Fabrication of transistor contacts 29 1992
5,935,762 Two-layered TSI process for dual damascene patterning 68 1997
 
Symetrix Corporation (2)
6,072,207 Process for fabricating layered superlattice materials and making electronic devices including same 16 1995
5,849,465 Photosensitive titanium carboxydiketonate and titanium carboxyketoester precursor solutions and method of patterning integrated circuits using the same 8 1996
 
UNITED MICROELECTRONICS CORP. (2)
5,652,166 Process for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor deposition 22 1996
5,627,087 Process for fabricating metal-oxide semiconductor (MOS) transistors based on lightly doped drain (LDD) structure 10 1996
 
3M INNOVATIVE PROPERTIES COMPANY (1)
2004/0087,690 Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions 30 2002
 
ADVANCED NANOTECHNOLOGIES, INC. (1)
2003/0073,042 Process and materials for formation of patterned films of functional materials 32 2001
 
AVIZA TECHNOLOGY, INC. (1)
4,770,590 Method and apparatus for transferring wafers between cassettes and a boat 185 1986
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
5,292,558 Process for metal deposition for microelectronic interconnections 71 1991
 
CANON KABUSHIKI KAISHA (1)
5,140,366 Exposure apparatus with a function for controlling alignment by use of latent images 37 1991
 
DAI NIPPON PRINTING CO., LTD. (1)
6,387,012 Metal complex solution, photosensitive metal complex solution, and method for forming metallic oxide films 6 1999
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
5,716,758 Process for forming fine pattern for semiconductor device utilizing multiple interlaced exposure masks 15 1997
 
INTELLECTUAL VENTURES HOLDING 40 LLC (1)
5,178,989 Pattern forming and transferring processes 36 1989
 
KABUSHIKI KAISHA TOSHIBA (1)
5,989,759 Pattern forming method using alignment from latent image or base pattern on substrate 25 1998
 
MASSACHUSETTS INSTITUTE OF TECHNOLOGY (1)
6,307,087 Ligands for metals and improved metal-catalyzed processes based thereon 52 1999
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
5,436,176 Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate 28 1992

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
KEMET CORPORATION, THE (1)
8,293,323 Thin metal film conductors and their manufacture 0 2007
 
YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM (1)
7,759,609 Method for manufacturing a patterned structure 2 2004

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Aug 13, 2014
11.5 Year Payment $7400.00 $3700.00 $1850.00 Aug 13, 2018
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00