ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping
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United States of America Patent
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Feb 20, 2007
Grant Date -
Nov 24, 2005
app pub date -
Sep 3, 2003
filing date -
Sep 3, 2003
priority date (Note) -
Expired
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Abstract
A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.
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