Different numbers of bits per cell in non-volatile memory devices
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United States of America Patent
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Feb 20, 2007
Grant Date -
Feb 9, 2006
app pub date -
Jan 19, 2005
filing date -
Aug 5, 2004
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Abstract
A method of manufacturing a non-volatile flash memory device, including setting a first number of bits stored per cell for at least one first cell less than a second number of bits stored per cell for at least one second cell such that the setting permanently fixes the first number and the second number prior to shipping the device for use. Preferably the setting is based on predicted reliabilities of the cells. Preferably, the predicted reliability of the first cells is less than the predicted reliability of the second cells. Preferably, the setting is based on respective locations within the device of the first cells and the second cells. Preferably, the setting is based on respective word lines connecting to the first cells and the second cells.
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