Selective etching of organosilicate films over silicon oxide stop etch layers
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United States of America Patent
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Feb 27, 2007
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N/A
app pub date -
Jul 23, 2001
filing date -
Jul 23, 2001
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Abstract
A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.
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