Plasma enhanced ALD of tantalum nitride and bilayer
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United States of America Patent
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Mar 6, 2007
Grant Date -
May 5, 2005
app pub date -
Oct 31, 2003
filing date -
Oct 31, 2003
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Abstract
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
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