Drain-extended MOS transistors with diode clamp and methods for making the same
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United States of America Patent
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-
Mar 6, 2007
Grant Date -
Jan 19, 2006
app pub date -
Jul 14, 2004
filing date -
Jul 14, 2004
priority date (Note) -
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Abstract
High side extended-drain MOS driver transistors (T2) are presented in which an extended drain (108, 156) is separated from a first buried layer (120) by a second buried layer (130), wherein an internal or external diode (148) is coupled between the first buried layer (120) and the extended drain (108, 156) to increase the breakdown voltage.
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