Electrical-interference-isolated transistor structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7187064
APP PUB NO 20060125063A1
SERIAL NO

11051677

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Abstract

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A transistor structure includes at least one chip; a packaging insulating layer, a first adhesive layer, a conducting layer, and a second adhesive layer sequentially provided on one side of the chip having electrical contacts thereon, so that the conducting layer is bonded between the first and the second adhesive layer; and a leadframe bonded to an outer side of the second adhesive layer. The conducting layer may be a metal sheet, a metal film, or a type of conducting fiber. The leadframe is connected to the electrical contacts on the chip via lead wires, and at least one of the electrical contacts on the chip is connected to the conducting layer via a conductor, so that the conducting layer is able to isolate electrical noises and reduce electromagnetic interferences, improve rates of transmission and heat release, strengthen chip packaging structure, and serve as a common grounding circuit.

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Patent Owner(s)

Patent OwnerAddress
DOMINTECH CO LTDNO 31 WUGONG 5TH RD WUGU TOWNSHIP TAIPEI COUNTY 248

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shih-yi Sindian, TW 18 147
Tzu, Chung-Hsing Zhong-he, TW 18 258

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