Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers
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United States of America Patent
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Mar 13, 2007
Grant Date -
Dec 1, 2005
app pub date -
Aug 18, 2004
filing date -
Aug 19, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method forming a tungsten contact can include forming a contact hole in an interlayer dielectric layer to expose a portion of an underlying silicon based substrate and to form a side wall of the contact hole. A tungsten silicide layer can be formed on at least on the exposed portion of the substrate. A tungsten nitride layer can be conformally formed on a surface of the interlayer dielectric layer, on the tungsten silicide layer and on the side wall. A contact tungsten layer can be formed on the tungsten nitride layer to fill the contact hole. Related apparatus and contacts are also disclosed.
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