Method and apparatus for determining concentration of defects and/or impurities in a semiconductor wafer
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United States of America Patent
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Mar 13, 2007
Grant Date -
Mar 30, 2006
app pub date -
Sep 28, 2004
filing date -
Sep 28, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To determine a concentration of defects and/or impurities in a semiconductor wafer, a first value of current is caused to flow in the semiconductor wafer having a substrate of semiconducting material. The semiconductor wafer is exposed to a pulse of light whereupon electron-hole pairs generated in the semiconductor wafer in response to the light pulse cause the current to increase to a second value. After termination of the light pulse, the rate of change of the current from the second value toward the first value is determined. A concentration of defects and/or impurities in the semiconductor wafer is determined as a function of the rate of change.
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