Method for texturing surfaces of silicon wafers
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United States of America Patent
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Mar 20, 2007
Grant Date -
Mar 30, 2006
app pub date -
Apr 22, 2004
filing date -
May 7, 2003
priority date (Note) -
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Abstract
A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.
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