Floating gate transistors
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United States of America Patent
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-
Mar 20, 2007
Grant Date -
Apr 27, 2006
app pub date -
Oct 28, 2003
filing date -
Oct 30, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A floating gate MOS transistor comprises one or more control gates, an active channel, and at least one floating gate disposed between the control gate(s) and the active channel. First and second non-linear resistances couple the floating gate to first and second control voltage sources respectively, the non-linear resistances forming a voltage divider network which sets the operating voltage of the floating gate.
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