Semiconductor etching paste and the use thereof for localized etching of semiconductor substrates
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United States of America Patent
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Mar 27, 2007
Grant Date -
Apr 1, 2004
app pub date -
Jun 27, 2003
filing date -
Jul 1, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of etching a semiconductor substrate is described, the method comprising the steps of applying a paste containing an etchant to the substrate, and carrying out a thermal processing step to etch a part or a layer of the substrate where the paste has been applied. The etchant paste is preferably a caustic etching paste. The etchant paste may be applied selectively to a major surface of the substrate to form a pattern of applied paste. For example, the paste may be applied by a printing method, such as screen-printing. The method may be used to produce solar cells.
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