Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 7199028
APP PUB NO 20040266212A1
SERIAL NO

10739746

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Abstract

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Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS S R LAGRATE BRIANZA
HYNIX SEMICONDUCTOR INCSAN 136-1 AMI-RI BUBAL-EUP ICHEON-SI GYEONGGI-DO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chang Jin Ichon-Shi, KR 17 56

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