Method for manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7199028
APP PUB NO 20040266212A1
SERIAL NO

10739746

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Abstract

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Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
STMICROELECTRONICS S.R.L.AGRATE BRIANZA, MI3044

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chang Jin Ichon-Shi, KR 17 50

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (2)
* 5970369 Semiconductor device with polysilicon layer of good crystallinity and its manufacture method 29 1997
* 6287944 Polycrystalline semiconductor device and its manufacture method 20 1999
 
INTEGRATED DEVICE TECHNOLOGY, INC. (1)
* 5349325 Multi-layer low modulation polycrystalline semiconductor resistor 4 1993
 
NATIONAL APPLIED RESEARCH LABORATORIES (1)
* 6495432 Method of improving a dual gate CMOS transistor to resist the boron-penetrating effect 1 2001
 
CHARTERED SEMICONDUCTOR MANUFACTURING PTE. LTD. (1)
* 5767004 Method for forming a low impurity diffusion polysilicon layer 85 1996
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 6162716 Amorphous silicon gate with mismatched grain-boundary microstructure 19 1999
 
NATIONAL SCIENCE COUNCIL (1)
* 5347161 Stacked-layer structure polysilicon emitter contacted p-n junction diode 12 1992
 
GLOBALFOUNDRIES INC. (1)
* 6228701 Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs 26 1997
 
WISCONSIN ALUMNI RESEARCH FOUNDATION (1)
* 4897360 Polysilicon thin film process 151 1987
 
UNITED MICROELECTRONICS CORP. (1)
* 6114196 Method of fabricating metal-oxide semiconductor transistor 2 1999
 
PS4 LUXCO S.A.R.L. (1)
* 6800543 Semiconductor device having a low-resistance gate electrode 12 2002
 
FUJITSU MICROELECTRONICS LIMITED (1)
* 4990997 Crystal grain diffusion barrier structure for a semiconductor device 34 1989
 
NEC ELECTRONICS CORPORATION (1)
* 6297529 Semiconductor device with multilayered gate structure 7 1999
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (1)
* 5441904 Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries 69 1994
* Cited By Examiner

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