Methods for fabricating an interlayer dielectric layer of a semiconductor device
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United States of America Patent
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Apr 3, 2007
Grant Date -
Apr 14, 2005
app pub date -
Oct 12, 2004
filing date -
Oct 11, 2003
priority date (Note) -
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Abstract
Methods for fabricating an interlayer dielectric layer of a semiconductor device are disclosed. An illustrated method comprises forming a metallic interconnect on a substrate; depositing an SRO layer on the metallic interconnect while the substrate is located in a chamber; and forming an FSG layer on the SRO layer without removing the substrate from the chamber.
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