Atomic layer deposition of hafnium-based high-k dielectric
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United States of America Patent
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Apr 17, 2007
Grant Date -
Oct 27, 2005
app pub date -
Sep 29, 2004
filing date -
Sep 30, 2003
priority date (Note) -
Expired
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Abstract
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
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