Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
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United States of America Patent
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May 1, 2007
Issued Date -
N/A
app pub date -
Oct 21, 2004
filing date -
Apr 23, 2002
priority date (Note) -
Expired
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Abstract
A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at least one layer of germanium formed on a surface of a ceramic substrate and having at least one capping layer formed on a surface of the layer of germanium is also provided. In addition, a method of forming a thin film germanium structure is provided including forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
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