Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
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United States of America Patent
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May 1, 2007
Grant Date -
Sep 8, 2005
app pub date -
Apr 29, 2005
filing date -
Jan 19, 2001
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Abstract
High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (208). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.
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