NAND flash memory device and method of programming the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 1, 2007
Grant Date -
Oct 20, 2005
app pub date -
Jul 9, 2004
filing date -
Apr 19, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is directed to a NAND flash memory device and a method of programming the same, which can improve integration of the device by removing a common source line connecting with a source line coupled to a plurality of cell blocks, control a voltage applied to a source line by each cell block, and rise a precharge level in a channel area by applying a pumping voltage to the source line relatively having low capacitance instead of a bitline having a large capacitance, and as a result of those, the NAND flash memory device can reduce disturbance, use a lower voltage than a power supply voltage on the bitline, which leads to reduce a current consumption.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully