Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment
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United States of America Patent
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May 8, 2007
Grant Date -
Oct 24, 2002
app pub date -
Mar 22, 2002
filing date -
Mar 23, 2001
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Abstract
Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H.sub.2O prior to metal contact formation.
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